Fraunhofer IPMS's MRAM (Magnetoresistive Random Access Memory) offers extremely fast write and read speeds of less than 10 nanoseconds, making it suitable for high-performance computing, storage devices, and AI. It has high endurance (>10^15 cycles) and excellent data retention (>10 years), operating within a wide temperature range of -40℃ to 150℃. MRAM is highly scalable, integrates well with CMOS processes, and is used in automotive, industrial, and consumer electronics applications. However, its manufacturing cost is moderate.
In contrast, Fraunhofer IPMS's FRAM (Ferroelectric Random Access Memory) is known for its very low power consumption and good write and read speeds (100ns and 45ns, respectively). It also boasts high endurance (>10^14 cycles) and excellent data retention (>10 years). Operating within a temperature range of -40℃ to 85℃, FRAM is less scalable than MRAM but still integrates well with CMOS processes. It is primarily used in automotive, industrial, medical, and consumer applications and has a lower manufacturing cost.
Chalcogenide RAM (CRAM) offers very fast write and read speeds (both around 50 nanoseconds) and high endurance (>10^12 cycles), with excellent data retention (>10 years). It operates over a broad temperature range (-40℃ to 150℃) and is highly suitable for high-performance computing, storage devices, and AI applications. CRAM is compatible with CMOS processes and typically used in advanced computing systems. However, it has a high manufacturing cost and operational complexity.
In summary, MRAM excels in speed and scalability for high-performance applications, FRAM is ideal for low-power and cost-sensitive applications, and CRAM is optimal for the fastest and most enduring memory needs in advanced computing.
