Magnetoresistive Random Access Memory (MRAM), is emerging as a compelling alternative to traditional memory technologies like DRAM and Flash. Unlike DRAM, which loses data when power is removed, and Flash, which has limited write cycles, MRAM is non-volatile, meaning it retains data even without power. This characteristic, coupled with its fast read and write speeds and high endurance, positions MRAM as a prime candidate for applications demanding reliability, speed, and durability. In the burgeoning IoT landscape, MRAM's low power consumption and non-volatility are particularly attractive. IoT devices often operate on battery power and require data persistence through sleep or power-off states. MRAM's ability to withstand numerous write cycles makes it suitable for applications involving frequent data updates, such as sensor data collection and transmission. On the other hand, in the high-performance computing (HPC) domain, MRAM's speed and endurance are crucial. Data centers and supercomputers demand memory solutions that can handle massive data volumes and rapid processing without compromising performance or data integrity. MRAM's potential to bridge the gap between the speed of DRAM and the endurance of Flash, while offering non-volatility, makes it a promising candidate for accelerating HPC workloads. While challenges such as cost and density still need to be addressed for widespread adoption, MRAM's unique properties make it a disruptive technology with the potential to reshape the memory landscape for IoT and HPC applications.
